tm june 2006 ffb20u p20dn 10a, 200v ul trafast dual rectifiers ?2006 fairchild semiconductor corporation ffb20up20dn rev. a www.fairchildsemi.com 1 ffb20up20dn 10a, 200v ultraf ast dual rectifiers features ? high reverse voltage : v rrm = 200v ? avalanche energy rated ? planar construction applications ? output rectifiers ? switching mode power supply ? fr ee-wheeling diode for motor application ? power switching circuits description the ffb20up20dn is an ultrafast rectifier. it has a low forward voltage drop and is a silicon nitride passivated ion- implanted epitaxial planar construction. this device is intended for use as a freewheeling/clamping rectifier in a variety of switching power supplies and other power switching applications. its low stored charge and hyperfast recovery minimize ri nging and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics t c = 25c unless otherwise noted package marking and ordering information symbol parameter ratings units v rrm peak repetitive reverse voltage 200 v v rwm working peak reverse voltage 200 v v r dc blocking voltage 200 v i f(avg) average rectified forward current @ t c = 155 o c10 a i fsm non-repetitive peak surge current 60hz single half-sine wave 100 a t j, t stg operating junction and storage temperature -55 to +175 c symbol parameter max units r jc 1 maximum thermal resistance, junction to case 3.5 c/w device marking device package reel size tape width quantity F20UP20DN F20UP20DN to-263 13? 24mm 800 pin assignments
ffb20u p20dn 10a, 200v ul trafast dual rectifiers ffb20up20dn rev. a www.fairchildsemi.com 2 electrical characteristics t c = 25c unless otherwise noted v f 2 i f = 10a i f = 10a t c = 25 c t c = 150 c - - - - 1.15 1.0 v v i r 2 v r = 200v v r = 200v t c = 25 c t c = 150 c - - - - 10 250 a a t rr i f =1a, di/dt = 200a/ s, v cc = 130v i f =10a, di/dt = 200a/ s, v cc = 130v t c = 25 c t c = 25 c - - 15 27 25 40 ns ns t a t b q rr i f =10a, di/dt = 200a/ s, v cc = 130v t c = 25 c t c = 25 c t c = 25 c - - - 21 6 50 - - - ns ns nc w avl avalanche energy (l = 20mh) 10 - - mj symbol parameter min. typ. max units notes 1: rth_jc value is specified for each die 2: pulse: test pulse width = 300s, duty cycle = 2% 2
ffb20u p20dn 10a, 200v ul trafast dual rectifiers ffb20up20dn rev. a www.fairchildsemi.com 3 typical characteristics t c = 25c unless otherwise noted figure 1. typical forward voltage drop 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 t c = 175 o c t c = 100 o c t c = 25 o c forward current, i f [a] forward voltage, v f [v] 20 figure 2. typical reverse current 0 50 100 150 200 1e-3 0.01 0.1 1 10 100 t c = 175 o c t c = 25 o c t c = 100 o c reverse current, i r [ a ] reverse voltage , v r [v] figure 3. 0.1 1 10 100 10 100 f = 1mhz capacitance , cj [pf] reverse voltage , v r [v] 400 typical junction capacitance figure 4. 50 100 150 200 250 300 20 25 30 35 40 45 50 t c = 175 o c t c = 25 o c t c = 150 o c i f = 10a reverse recovery time, t rr [ns] di/dt [ a/ s ] typical reverse recovery time figure 5. typical reverse recovery current 50 100 150 200 250 300 0 2 4 6 8 t c = 175 o c t c = 25 o c t c = 150 o c i f = 10a reverse recovery current, i rr [ a ] di/dt [ /s ] figure 6. 120 130 140 150 160 170 0 2 4 6 8 10 12 average recitified forward current, i f(av) [a] case temperature, t c ( o c ) dc case temperature, t c [ o c]
ffb20u p20dn 10a, 200v ul trafast dual rectifiers ffb20up20dn rev. a www.fairchildsemi.com 4 figure 7. gate charge characteristics figure 8. capacitance vs drain to source voltage figure 9. maximum continuous drain current vs ambient temperature figure 10. forward bias safe operating area figure 11. single pulse maximum power dissipation figure 12. transient thermal response curve typical characteristics t c = 25c unless otherwise noted
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